Sparc Foundry, S.L. has been awarded funding under the Strategic Project for Economic Recovery and Transformation (PERTE) for Microelectronics and Semiconductors (PERTE Chip), promoted by the Spanish Ministry of Industry and Tourism as part of Spain’s Recovery, Transformation and Resilience Plan, funded by the European Union – NextGenerationEU.
The main objective of the GANFI project is to carry out industrial research and develop advanced manufacturing techniques for III-V semiconductor devices, specifically Gallium Nitride (GaN), Gallium Arsenide (GaAs), and Indium Phosphide (InP).. The initiative aims to generate proprietary know-how in critical areas such as epitaxy, prototyping, and the advanced characterization of photonic and electronic chips, laying the foundations for future European capabilities in the manufacturing of high-value semiconductor technologies.
Through the development of this project, Sparc Foundry reinforces its position as a leading company in advanced photonics and semiconductor manufacturing, contributing to the strengthening of the European microelectronics value chain and the creation of strategic intellectual property in technologies that are essential to Europe’s technological sovereignty.
The project is also expected to have a significant industrial impact by advancing new manufacturing processes for high-performance photonic and electronic devices. These developments will support applications in strategic sectors such as telecommunications, artificial intelligence, automotive, power electronics, and optical communications. The project outcomes will contribute to enhancing the competitiveness of Europe’s industrial ecosystem, reducing dependence on proprietary foreign technologies, and accelerating the transfer of innovation to the market.
This project has received €1,084,756.07 in public funding, reflecting the joint commitment of public authorities, the scientific community, and industry to fostering research, development, and innovation (R&D&I) in the field of microelectronics and semiconductors.
